Device fabrication involving surface planarization

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Utilizing reflow

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438781, 427370, H01L 21312

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active

060487992

ABSTRACT:
A method for improving the planarity of a layer of material formed on the surface of a topographic substrate, is disclosed. The layer of planarization material formed over the topographic substrate has a first area and a second area. The planarization material in the first area is proximate to the perimeter of the topographic substrate and surrounds the planarization material in the second area. The planarization material in the first area is partially solidified, so that the planarization material in the second area is substantially confined throughout the height of the planarization material in the first area and remains within the perimeter of the topographic substrate when the surface of the layer of planarization material is planarized. The planarization material is planarized by contacting such material with a flat surface of an object with sufficient force to transfer the surface flatness from the flat surface of the object to the layer of planarization material. A release material is optionally placed between the layer of planarization material and the object with the flat surface to facilitate separation of the flat surface of the object from contact with the layer of planarization material after planarization and solidification.

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patent: 5665202 (1997-09-01), Subramanian et al.
patent: 5677380 (1997-10-01), Matsumura et al.
patent: 5736424 (1998-04-01), Prybyla et al.

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