Device fabrication by X-ray lithography utilizing stable boron n

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430966, 430967, 430 5, 428698, 428699, 428704, 378 35, 378 34, 427160, 4273722, G03F 900, G21K 500

Patent

active

048680931

ABSTRACT:
A hydrogen-free boron-containing membrane in tension exhibits advantageous properties for use as a mask in X-ray lithography.

REFERENCES:
patent: 4096297 (1978-06-01), Pappis et al.
patent: 4171489 (1979-10-01), Adams et al.
patent: 4301237 (1981-11-01), Burns
patent: 4436797 (1984-03-01), Brady et al.
patent: 4522842 (1985-06-01), Levinstein et al.
patent: 4539278 (1985-09-01), Williams et al.
patent: 4565741 (1986-01-01), Morimoto et al.
patent: 4565747 (1986-01-01), Nakea et al.
patent: 4604292 (1986-08-01), Evans et al.
patent: 4608268 (1986-08-01), Shimkunas
patent: 4668336 (1987-05-01), Shimkunas
patent: 4677042 (1987-06-01), Kato et al.
patent: 4680243 (1987-07-01), Skimkunas et al.
patent: 4690841 (1987-09-01), Tanji et al.
A. C. Adams and C. D. Capio, "The Chemical Deposition of Boron-Nitrogen Films", J. Electrochemical Society, 127, (1980), pp. 399-405.
Journal Vacuum Science Technology B, vol. 5(1), Jan./Feb. 1987, "Radiation Damage Effects in Boron Nitride Mask Membranes Subjected to X-Ray Exposures" by W. A. Johnson et al., pp. 257-261.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Device fabrication by X-ray lithography utilizing stable boron n does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device fabrication by X-ray lithography utilizing stable boron n, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device fabrication by X-ray lithography utilizing stable boron n will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-368267

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.