Device fabrication by plasma etching

Details Device fabrication by plasma etching Device fabrication by plasma etching

1978-07-31

1981-03-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156657, 156665, 204192E, 252 791, C23F 100, C23F 102

Patent

active

042565340

ABSTRACT:
Integrated circuit fabrication, e.g., silicon LSI is expedited by plasma etching in any of a novel class of etchants. Appropriate plasma environments are produced by introduction of halide-halogen combinations as exemplified by BCl.sub.3 -Cl.sub.2.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4030967 (1977-06-01), Ingrey et al.

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