Device fabrication by plasma etching

Details Device fabrication by plasma etching Device fabrication by plasma etching

1980-05-13

1982-02-09

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 204192E, 252 791, H01L 21306

Patent

active

043148751

ABSTRACT:
Etch rate in plasma-assisted etching is increased by inclusion of an additional oxidant. The oxidant increases consumption of unsaturates in the plasma to increase etchant species lifetime and to suppress polymer formation.

REFERENCES:
patent: 4162185 (1979-07-01), Cobunn et al.
patent: 4211601 (1980-07-01), Mogab

Affiliated with

Also associated with

Rating

Device fabrication by plasma etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device fabrication by plasma etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device fabrication by plasma etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1259674