Device fabrication by plasma etching

Details Device fabrication by plasma etching Device fabrication by plasma etching

1978-07-31

1980-10-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156657, 156662, 156665, 204192E, 252 791, 1566591, H01L 21306, C23F 102

Patent

active

042266653

ABSTRACT:
Plasma etching as applied to many of the materials encountered in the fabrication of LSI's is complicated by loading effect--the dependence of etch rate on the integrated surface area to be etched. This problem is alleviated by appropriate choice of etchant and etching conditions. Appropriate choice of system parameters, generally most concerned with the inherent lifetime of etchant species, may also result in improvement of etch rate uniformity on a wafer-by-wafer basis.

REFERENCES:
patent: 3994793 (1976-11-01), Harvilchuck
patent: 4030967 (1977-06-01), Ingrey et al.
patent: 4101411 (1978-07-01), Suzuki et al.

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