Device fabrication by plasma etching

Details Device fabrication by plasma etching Device fabrication by plasma etching

1978-07-31

1980-07-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156662, 1566591, 204164, 204192E, 252 791, H01L 21306, C23F 102

Patent

active

042116015

ABSTRACT:
Integrated circuit fabrication, e.g., silicon LSI is expedited by plasma etching in any of a novel class of etchants. Appropriate plasma environments are produced by introduction of fluorocarbon-halogenation combinations as exemplified by CF.sub.3 Cl.

REFERENCES:
patent: 3880684 (1975-04-01), Abe
patent: 3984301 (1976-10-01), Matsuzaki et al.
patent: 4069096 (1978-01-01), Reinberg et al.

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