Device fabrication by plasma etching

Details Device fabrication by plasma etching Device fabrication by plasma etching

1978-07-31

1980-06-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156657, 156662, 204192E, 252 791, H01L 21306

Patent

active

042082412

ABSTRACT:
High density fine-line integrated structure fabrication is expedited by use of plasma etching systems which assure straight vertical walls (absence of undercutting). Critical to the sytems is choice of appropriate plasma chemistry. Appropriate systems are characterized by inclusion of recombination centers, as well as active etchant species. Recombination centers which effectively terminate etchant species lifetime in the immediate vicinity of resist walls afford means for controlling etching anisotropy. Use is foreseen in large scale integrated circuitry (LSI) and is expected to be of particular interest for extremely fine design rules, i.e., in Very Large Scale Integrated circuitry.

REFERENCES:
patent: 3940506 (1976-02-01), Heinecke
patent: 4030967 (1977-06-01), Ingrey et al.
patent: 4069096 (1978-01-01), Reinberg et al.
patent: 4101411 (1978-07-01), Suzuki et al.

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