Device fabrication by anisotropic wet etch

Details Device fabrication by anisotropic wet etch Device fabrication by anisotropic wet etch

2006-01-17

2008-08-12

Baumeister, Bradley W. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S268000, C438S753000, C257S329000, C257SE21410

Reexamination Certificate

active

07410844

ABSTRACT:
A method of fabrication and a field effect device structure are presented that reduce source/drain capacitance and allow for device body contact. A Si based material pedestal is produced, the top surface and the sidewalls of which are oriented in a way to be substantially parallel with selected crystallographic planes of the pedestal and of a supporting member. The pedestal is wet etched with an anisotropic solution containing ammonium hydroxide. The sidewalls of the pedestal become faceted forming a segment in the pedestal with a reduced cross section. The dopant concentration in the reduced cross section segment is chosen to be sufficiently high for it to provide for electrical continuity through the pedestal.

REFERENCES:
patent: 5849624 (1998-12-01), Fazan
patent: 6475890 (2002-11-01), Yu
patent: 6566273 (2003-05-01), Kudelka
patent: 6642090 (2003-11-01), Fried et al.
patent: 6734077 (2004-05-01), Forster
patent: 2006/0086977 (2006-04-01), Shah et al.
patent: 2007/0001173 (2007-01-01), Brask et al.
patent: 2007/0167024 (2007-07-01), Li

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