Device containing sample preparation sites for transmission elec

Details Device containing sample preparation sites for transmission elec Device containing sample preparation sites for transmission elec

1998-09-09

2000-10-31

Speer, Timothy

Radiant energy

Inspection of solids or liquids by charged particles

Analyte supports

2504911, 428141, 428428, 428450, 428446, G21K 508

Patent

active

06140652&

ABSTRACT:
A device contains at least one sample preparation site for transmission electron microscopic (TEM) analysis. Included in the device is a first layer of silicon dioxide that serves as a substrate, a layer of silicon overlying the substrate, a second layer of silicon dioxide deposited on the silicon layer, and a continuous trench that circumscribes a sample preparation site for TEM analysis. The trench extends through the second layer of silicon dioxide and the layer of silicon; that portion extending through the silicon dioxide layer is wider than the portion through the silicon layer. In a process for forming a device containing at least one sample preparation site for TEM analysis, a layer of silicon is formed on a silicon dioxide substrate that is optionally attached to a silicon handle. A second layer of silicon dioxide is formed on the silicon layer, and a mask forming a continuous trench is etched in the second silicon dioxide layer. The trench is extended by retrograde etching through the layer of silicon. A portion of the second layer of silicon dioxide adjacent to the continuous trenches is removed, thereby widening the portion of the trench extending through the second silicon dioxide layer to a width greater than that of the portion through the silicon layer. The resulting trench circumscribes a sample preparation site for TEM analysis. A process for preparing a sample for TEM analysis entails the formation of a thin film of sample material on the second silicon dioxide layer of the described device.

REFERENCES:
patent: 5367171 (1994-11-01), Aoyama et al.
patent: 5440123 (1995-08-01), Ikeda et al.
patent: 5572026 (1996-11-01), Ikeda et al.
patent: 5821544 (1998-10-01), Agustus et al.
patent: 5907157 (1999-03-01), Yoshioka et al.
patent: 5935870 (1999-08-01), Lee
patent: 5990478 (1999-11-01), Liu
C.J. Varker and L. H. Chang, "Preparation of Large-Area, Electron-Transparent Silicon Specimens by Anisotropic Etching", Solid State Technology, Apr. 1983, pp. 143 through 147.
David B. Williams, (David Bernard) 1949, Transmission Electron Microscopy: A Textbook for Materials Science, Chapter 1, "Materials-Microscopy" and Chapter 10, "Specimen Preparation" (No Month).
Jamie H. Rose and Richard Flutie, "Sample Preparation for Transmission Electron Microscopy Studies in Microelectronics", Digital Equipment Corporation, Northboro, MA 01532, pp. 13-1 through 13-7, Copyright 1990, ASM International, Metals Park, OH.

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