Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-19
2011-07-19
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S040000, C257S288000, C438S276000, C438S289000
Reexamination Certificate
active
07982274
ABSTRACT:
A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.
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Afzali-Ardakani Ali
Kagan Cherie R.
Murray Christopher B.
Sandstrom Robert L.
Talapin Dmitri V.
Alexanian, Esq. Vazken
Connolly Bove & Lodge & Hutz LLP
Dang Phuc T
International Business Machines - Corporation
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