Device comprising an ohmic via contact, and method of...

Details Device comprising an ohmic via contact, and method of... Device comprising an ohmic via contact, and method of...

2006-09-13

2009-10-13

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21507, C257SE21538, C257SE21627, C438S637000, C438S643000, C438S672000, C438S761000

Reexamination Certificate

active

07601624

ABSTRACT:
Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier layer, creating an opening in the insulating layer to expose the conductive barrier layer, and forming a via contact in the opening. The conductive barrier layer protects the metal layer by preventing the formation of an oxide layer, which could reduce conductivity.

REFERENCES:
patent: 6177350 (2001-01-01), Sundarrajan et al.
patent: 6569783 (2003-05-01), Uzoh et al.

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