Device and method using isotopically enriched silicon

Details Device and method using isotopically enriched silicon Device and method using isotopically enriched silicon

2004-06-23

2009-02-24

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C117S002000, C117S928000

Reexamination Certificate

active

07494888

ABSTRACT:
The present invention provides a process for manufacturing a semiconductor device that can be incorporated into an integrated circuit. The method includes, forming a first doped layer of isotopically enriched silicon over a foundational substrate, forming a second layer of an isotopically enriched semiconductor material silicon over the first doped layer, and constructing active devices on the second layer. The device includes a first doped layer of an isotopically enriched semiconductor material and a second layer of an isotopically enriched semiconductor material located over the first doped layer, and active devices located on the second layer.

REFERENCES:
patent: 5144409 (1992-09-01), Ma
patent: 5891242 (1999-04-01), Pesklak et al.
patent: 6653658 (2003-11-01), Burden
patent: 2004/0169225 (2004-09-01), Burden

Affiliated with

Also associated with

Rating

Device and method using isotopically enriched silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device and method using isotopically enriched silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device and method using isotopically enriched silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4117394