Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-06-26
2007-06-26
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S639000, C438S963000, C257SE21584
Reexamination Certificate
active
10850812
ABSTRACT:
The present invention provides an interconnect that can be employed in an integrated circuit. The interconnect includes a metal line located over a substrate, a dielectric layer located over the metal line, and an interconnect located in the dielectric layer, including a landed portion located over the metal line and an unlanded portion located along at least a portion of a lateral edge of the metal line. The unlanded portion is at least partially filled with a polymer, and the landed portion is substantially filled with a conductive material. A method for manufacturing the interconnect is also provided.
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SAC™ (semi-aqueous chemistry) Remover; “Aqueous-Organic Formulations That Quickly and Completely Remove all Types of Post-Etch Residue Under Ambient Conditions”; www.ekctech.com.
Baker Aleg—310 Stipper/Residue Remover; J.T. Baker Microelectronic Materials, 2002.
Rossi Nace
Sidhartha Sen
Singh Ranbir
Agere Systems Inc.
Baumeister B. William
Such Matthew W.
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