Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Removal of imaged layers
Patent
1998-06-03
2000-07-18
Gibson, Sharon
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Removal of imaged layers
430311, 430322, G03F 732
Patent
active
060905344
ABSTRACT:
The present invention provides, an apparatus and method for decreasing circular defects and charge buildup on a semiconductor wafer having a photoresist formed thereon. In one embodiment, the method comprises the steps of positioning a semiconductor wafer in a track developer, applying a photoresist developer to a first side the semiconductor at a predetermined speed. That initial speed is then increased to a speed that ranges from about 400 rpm to 800 rpm. The photoresist is rinsed from the semiconductor while a back spray is applied to a second side of the semiconductor during the rinsing. Additionally, the semiconductor wafer is subjected to a flow of ions from an ionization source within the tracking device itself. The ionization within the tracking device is one advantageous aspect over prior art systems because the substantial direct flow of ions within the tracking device reduced the charge buildup associated with the increased spin speeds.
REFERENCES:
patent: 4557986 (1985-12-01), Blais
patent: 4951172 (1990-08-01), Steinman
patent: 5342738 (1994-08-01), Ikeda
patent: 5740488 (1998-04-01), Fujimoto
patent: 5777209 (1998-07-01), Tien
patent: 5826130 (1998-10-01), Tanaka
patent: 5866303 (1999-02-01), Azuma
Costigan John G.
Huibregtse David
Barreca Nicole
Gibson Sharon
Lucent Technologies - Inc.
LandOfFree
Device and method of decreasing circular defects and charge buil does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device and method of decreasing circular defects and charge buil, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device and method of decreasing circular defects and charge buil will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2034840