Device and method of decreasing circular defects and charge buil

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Removal of imaged layers

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430311, 430322, G03F 732

Patent

active

060905344

ABSTRACT:
The present invention provides, an apparatus and method for decreasing circular defects and charge buildup on a semiconductor wafer having a photoresist formed thereon. In one embodiment, the method comprises the steps of positioning a semiconductor wafer in a track developer, applying a photoresist developer to a first side the semiconductor at a predetermined speed. That initial speed is then increased to a speed that ranges from about 400 rpm to 800 rpm. The photoresist is rinsed from the semiconductor while a back spray is applied to a second side of the semiconductor during the rinsing. Additionally, the semiconductor wafer is subjected to a flow of ions from an ionization source within the tracking device itself. The ionization within the tracking device is one advantageous aspect over prior art systems because the substantial direct flow of ions within the tracking device reduced the charge buildup associated with the increased spin speeds.

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patent: 5342738 (1994-08-01), Ikeda
patent: 5740488 (1998-04-01), Fujimoto
patent: 5777209 (1998-07-01), Tien
patent: 5826130 (1998-10-01), Tanaka
patent: 5866303 (1999-02-01), Azuma

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