Static information storage and retrieval – Read/write circuit – Data refresh
Patent
1999-04-22
2000-07-04
Elms, Richard
Static information storage and retrieval
Read/write circuit
Data refresh
365203, G11C 700
Patent
active
06084812&
ABSTRACT:
Device and method for varying a bit line precharge voltage in a semiconductor memory, in which the bit line precharge voltage is varied with a chip temperature for improving a refresh characteristic, reducing a power consumption, the device including a temperature detector for detecting a change of a chip temperature of the semiconductor memory, a bit line precharge voltage generator for varying and forwarding the bit line precharge voltage in response to a temperature detection signal provided from the precharge voltage generator, and a sensing unit for receiving the bit line precharge voltage provided from the precharge voltage generator and sensing a data from the memory cell, the method including the steps of detecting a change of a chip temperature of the semiconductor memory, and dropping the bit line precharge voltage before forwarding the bit line precharge voltage if the chip temperature of the semiconductor memory is higher than a preset temperature.
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Elms Richard
LG Semicon Co. Ltd.
Phung Anh
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