Device and method for using dynamic cell plate sensing in a...

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Reexamination Certificate

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C257S296000, C365S063000

Reexamination Certificate

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08009460

ABSTRACT:
A memory cell, device, system and method for operating a memory cell utilize an isolated dynamic cell plate. The memory cell includes a first and second pass transistor and a first and second capacitor. The first pass transistor and first capacitor and the second pass transistor and second capacitor are each configured in series for individual respective coupling between a first digit line and a second digit line. The first and second pass transistors are further configured for respective control by first and second wordlines. The memory cell further includes an interconnection formed on a cell plate conductor between a terminal end of the first capacitor and a terminal end of the second capacitor. Furthermore, the interconnection is electrically isolated from other portions of the cell plate conductor.

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