Device and method for processing a plasma to alter the surface o

Details Device and method for processing a plasma to alter the surface o Device and method for processing a plasma to alter the surface o

1996-07-31

1999-11-30

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

427571, 156345, 118723I, H05H 100

Patent

active

059936789

ABSTRACT:
A device, and a method for using the device, for altering the surface of a substrate with a plasma includes a vessel having a chamber, a magnet and a plasma generator. Both the generator and the magnet are positioned outside the vessel while the substrate to be altered is placed in the chamber. The magnetic field is established substantially parallel to the substrate surface that is to be altered to insulate the plasma from the substrate surface. Also, a radio frequency wave is propagated from the generator into the chamber to generate the plasma in chamber which alters the surface. Specifically, the plasma is generated in ionization zones located between the substrate surface and the vessel walls. A region in the chamber is thus defined between the ionization zones where the plasma is established with substantially uniform density. Additionally, electrodes can be placed to voltage bias directly or capacitively the plasma for ion etching or deposition on the substrate surface.

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patent: 5431769 (1995-07-01), Kisakibaru et al.

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