Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2007-02-06
2007-02-06
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S015000, C117S016000, C117S213000, C117S214000
Reexamination Certificate
active
10822662
ABSTRACT:
In a device and a method for measuring the position of the liquid surface of a melt while a single crystal is being pulled, two measuring-lines are defined in an image of a fusion ring which is captured by means of a two-dimensional CCD camera, the intersections of the respective measuring lines and the fusion ring, on the opposite sides of the fusion ring, are detected, and the central position of the single crystal is calculated based on the intervals between the intersections on the opposite sides of the fusion ring, whereby the position of the liquid surface of the melt is determined.
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Takanashi Keiichi
Takase Nobumitsu
Kunemund Robert
Sumitomo Mitsubishi Silicon Corporation
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