Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-02-06
2007-02-06
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000, C365S211000
Reexamination Certificate
active
11197033
ABSTRACT:
A reference voltage generating device that provides a constant reference voltage even with temperature change in a ferroelectric random access memory and a method for driving the same are provided. A device for generating a reference voltage in a ferroelectric random access memory including memory cells, each of which has one ferroelectric capacitor and one access transistor, includes a reference cell composed of a ferroelectric capacitor and a transistor; a reference plate line connected to one end of the ferroelectric capacitor constituting the reference cell; and a reference plate line driver circuit for adjusting a voltage level of a reference plate line enable signal depending on temperature change so that a constant reference voltage is generated.
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Jeon Byung-Gil
Lee Han-Joo
Lee Kang-Woon
Min Byung-Jun
Elms Richard
Nguyen Hien
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