Coating apparatus – Gas or vapor deposition – With treating means
Patent
1995-11-17
1998-03-10
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118723MW, 118723MR, 118715, 118726, C23C 1600
Patent
active
057256748
ABSTRACT:
An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitrogen source introduces activated nitrogen into the growth chamber and directs the activated nitrogen towards the substrate. The activated nitrogen comprises ionic nitrogen species and atomic nitrogen species. An external magnet and/or an exit aperture control the amount of atomic nitrogen species and ionic nitrogen species reaching the substrate.
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J.S
Molnar Richard J.
Moustakas Theodore D.
Bueker Richard
Lund Jeffrie R.
Trustees of Boston University
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