Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1992-09-29
1994-08-16
Pal, Asok
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429812, 20429816, 20429819, 20429821, 20429822, C23C 1434
Patent
active
053384229
ABSTRACT:
A triple magnetron array positioned inside a vacuum chamber is provided. The array includes a planar magnetron situated above dual rotatable unbalanced cylindrical magnetrons. The planar magnetron is partially shielded from the dual magnetrons by a baffle. An inert gas outlet is positioned near the planar magnetron target whereas oxygen gas outlets are positioned near the cylindrical magnetrons. In this fashion, the reactive gas flow to the planar magnetron is restricted. The system is particularly well suited for forming metal oxide films, such as titanium oxide, that are difficult to deposit by conventional means. The oxygen flow rate is controlled so that the planar magnetron operates in the metallic mode.
REFERENCES:
patent: 4417968 (1983-11-01), McKelvey
patent: 4596645 (1986-06-01), Stirn
patent: 4988422 (1991-01-01), Wirz
patent: 5108574 (1992-04-01), Kirs et al.
patent: 5215638 (1993-06-01), Hausler
Scherer and Wirz, "Reactive High Rate D.C. Sputtering of Oxides," Thin Solid Films, 119 (1984), pp. 203-209.
Maniv et al., "Transparent Conducting Zinc Oxide and Indium-Tin Oxide Films Prepared by Modified Reactive Planar Magnetron Sputtering," J. Vac. Sci. Technol. A, 1:3 (Jul.-Sep. 1983), pp. 1370-1375.
Westwood, William D., sections 9.5.3 and 9.5.4 of "Reactive Sputter Deposition," chapter 9 in Handbook of Plasma Processing Technology, eds. Rossnagel et al., Park Ridge, N.J.: Noyes Publications, 1990, pp. 249-256.
Belkind Abraham I.
Wamboldt Leonard
Wolfe Jesse D.
Cassett Larry R.
Draegert David A.
Pal Asok
The BOC Group Inc.
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