Device and method for accurate etching and removal of thin film

Details Device and method for accurate etching and removal of thin film Device and method for accurate etching and removal of thin film

1992-11-09

1994-02-01

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134031, 156626, 156628, 156635, 156657, 156345, B44C 122, C03C 1500, C03C 2506

Patent

active

052829251

ABSTRACT:
New device and method are described for accurate etching and removal of thin layer by controlling the surface residence time, thickness and composition of reactant containing film. Etching of silicon dioxide at low pressure using a quartz crystal microbalance is illustrated. Usefulness of the invention in the manufacture of microelectronic devices is shown.

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patent: 5167761 (1992-12-01), Westendrop et al.
patent: 5181985 (1993-01-01), Lampert et al.
Vapor Phase Wafer Cleaning: Processing for the 1990s, B. E. Deal, et al., Jul. 1990, Solid State Technology, pp. 73-77.
Anhydrous HF Etching of NativeSiO.sub.2 : Applications to Device Fabrication, Richard E. Novak, Mar. 1988, Solid State Technology, pp. 39-41.
Proceedings of Symposium on Dry Process, Oct. 30-31, 1989, Tokyo, Nishimo, et al., Damage-Free Selective Etching of Si Native Oxide Employing Fluorine Atoms and Nitrogen Hydrides Produced by NH.sub.3 +NF.sub.3 Microwave Discharge, pp. 90-93.
Physical Chemistry, 3rd Ed., Daniels & Alberty (Book, 1966, published by John Wiley, New York, pp. 148-150.
IBM Technical Disclosure Bulletin, vol. 19, No. 7, Dec. 1976, Etching of SiO.sub.2 In Gaseous HF/H.sub.2 O, pp. 2513, Beyer et al.

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