Device and manufacturing method for a ferroelectric memory

Details Device and manufacturing method for a ferroelectric memory Device and manufacturing method for a ferroelectric memory

1996-11-18

1998-04-28

Tsai, Jey

Fishing, trapping, and vermin destroying

437919, 437 42, 437 52, H01L 2170, H01L 2700

Patent

active

057443742

ABSTRACT:
A ferroelectric memory device of an MFIS FET structuring using a yttrium oxide film as a buffer film and a manufacturing method of the memory device are provided. The MFIS FET includes a p-type silicon substrate, a field oxide film formed in a device isolation region of the silicon substrate, a gate yttrium oxide film formed on the surface of the silicon substrate, a gate ferroelectric film formed on the gate yttrium oxide film, a gate TiN electrode formed on the gate ferroelectric film, and an n-type source/drain region formed in the silicon substrate of both sides of the gate TiN electrode. In this way, single crystals of the gate yttrium oxide film are easily formed resulting in the formation of a good-quality ferroelectric film on the yttrium oxide film.

REFERENCES:
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5185689 (1993-02-01), Maniar
patent: 5187638 (1993-02-01), Sandhu et al.

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