Device and a method for epitaxially growing objects by CVD

Details Device and a method for epitaxially growing objects by CVD Device and a method for epitaxially growing objects by CVD

1997-08-25

2000-02-29

Hiteshew, Felisa

Coating processes

Coating by vapor, gas, or smoke

117 89, 117 93, 117 95, 117102, 4272551, C23C 1644

Patent

active

060306610

ABSTRACT:
A method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof by Chemical Vapor Deposition on a substrate received in a susceptor having circumferential walls, the method comprises heating the circumferential susceptor walls, and thereby the substrate and a gas mixture led to the substrate for the growth, above a temperature level at which sublimination of the material grown starts to considerably increase, and feeding the gas mixture into the susceptor with a composition and at a rate that ensures a positive growth.

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