Developing solution for positive-working photoresist comprising

Details Developing solution for positive-working photoresist comprising Developing solution for positive-working photoresist comprising

1986-08-04

1988-11-15

Michl, Paul R.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Finishing or perfecting composition or product

430309, G03C 318

Patent

active

047849371

ABSTRACT:
The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metal ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an anionic or non-ionic fluorine-containing surface active agent of specific types. In comparison with conventional developing solutions without such a surface active agent, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer and higher sensitivity and smaller temperature dependency of development.

REFERENCES:
patent: 4147545 (1979-04-01), Rowe et al.
patent: 4530895 (1985-07-01), Simon et al.
patent: 4603058 (1986-07-01), Adams
patent: 4610953 (1986-09-01), Hashimoto et al.
patent: 4613561 (1986-09-01), Lewis

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