Developer solution for actinic ray-sensitive resist

Details Developer solution for actinic ray-sensitive resist Developer solution for actinic ray-sensitive resist

1994-04-22

1996-08-06

Dote, Janis L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Finishing or perfecting composition or product

430309, 430325, 430326, G03F 732

Patent

active

055432689

ABSTRACT:
Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.

REFERENCES:
patent: 4576903 (1986-03-01), Baron et al.
patent: 4610953 (1986-09-01), Hashimoto et al.
patent: 4762771 (1988-08-01), Matsumoto et al.
patent: 4820621 (1989-04-01), Tanaka et al.
patent: 4880724 (1989-07-01), Toyama et al.

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