Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2004-06-22
2010-12-07
Le, Hoa V (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S309000
Reexamination Certificate
active
07846640
ABSTRACT:
A developer composition for resists which has a high dissolution rate (high developing sensitivity). The developer composition for resists comprises an organic quaternary ammonium base as a main component and a surfactant containing an anionic surfactant represented by formula (I).
REFERENCES:
patent: 3207725 (1965-09-01), Pfeifer
patent: 5300404 (1994-04-01), Tani et al.
patent: 5543268 (1996-08-01), Tanaka et al.
patent: 5985525 (1999-11-01), Sato et al.
patent: 6329126 (2001-12-01), Tanaka et al.
patent: 6451510 (2002-09-01), Messick et al.
patent: 6511790 (2003-01-01), Takamiya
patent: 6900003 (2005-05-01), Anzures et al.
patent: 7063937 (2006-06-01), Takamiya
patent: 7147995 (2006-12-01), Takamiya
patent: 2003/0091732 (2003-05-01), Kanda
patent: 2004/0185371 (2004-09-01), Takamiya
patent: 0 272 686 (1988-06-01), None
patent: 0 323 836 (1989-07-01), None
patent: 61232453 (1986-10-01), None
patent: 64072154 (1989-03-01), None
patent: 04204454 (1990-11-01), None
patent: 2000155428 (2000-06-01), None
Saito Koji
Washio Yasushi
Knobbe Martens Olson & Bear LLP
Le Hoa V
Tokyo Ohka Kogyo Co. Ltd.
LandOfFree
Developer composition for resists and method for formation... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Developer composition for resists and method for formation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Developer composition for resists and method for formation... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4206112