Deuterium incorporated nitride

Details Deuterium incorporated nitride Deuterium incorporated nitride

2005-09-13

2005-09-13

Eckert, George (Department: 2815)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C438S783000, C438S791000

Reexamination Certificate

active

06943126

ABSTRACT:
A method of forming a semiconductor structure comprises forming an etch-stop layer comprising nitride, on a stack. The stack is on a semiconductor substrate, and the stack comprises (i) a gate layer. The forming is by CVD with a gas comprising a first compound which is SixL2x, and a second compound comprising nitrogen and deuterium, L is an amino group, and X is 1 or 2.

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