Deuterium doping for hot carrier reliability improvement

Details Deuterium doping for hot carrier reliability improvement Deuterium doping for hot carrier reliability improvement

1997-12-18

2000-11-07

Chaudhuri, Olik

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438558, 438565, 257607, H01L 2976

Patent

active

061436321

ABSTRACT:
A semiconductor device having reduced hot carrier degradation is achieved by doping the semiconductor substrate and gate oxide with deuterium. A conventional semiconductor device is formed with sequentially deposited metal layers and dielectric layers and a topside protective dielectric layer deposited thereon. Deuterium is introduced to the semiconductor device by using deuterium-containing reactants in at least one of the semiconductor manufacturing steps to passivate dangling silicon bonds at the silicon/oxide interface region.

REFERENCES:
patent: 5830575 (1998-11-01), Warren et al.
patent: 5872387 (1999-02-01), Lyding et al.
J.W. Lyding et al., "Reduction Of Hot Electron Degradation In Metal Oxide Semiconductor Transistors By Deuterium Processing", Applied Physics Letter, vol. 68, No. 18, Apr. 29, 1996; Transistors pp. 2526-2528.

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