Determining photoresist parameters using optical metrology

Details Determining photoresist parameters using optical metrology Determining photoresist parameters using optical metrology

2007-03-28

2010-06-01

Toatley, Jr., Gregory J (Department: 2877)

Optics: measuring and testing

By configuration comparison

With projection on viewing screen

C356S237100, C356S237500, C356S601000, C356S639000, C438S014000, C438S016000

Reexamination Certificate

active

07728976

ABSTRACT:
To generate a simulated diffraction signal, one or more values of one or more photoresist parameters, which characterize behavior of photoresist when the photoresist undergoes processing steps in a wafer application, are obtained. One or more values of one or more profile parameters are derived using the one or more values of the one or more photoresist parameters. The one or more profile parameters characterize one or more geometric features of the structure. A simulated diffraction signal is generated using the one or more values of the one or more profile parameters. The simulated diffraction signal characterizes behavior of light diffracted from the structure. The generated simulated diffraction signal is associated with the one or more values of the one or more photoresist parameters. The generated simulated diffraction signal, the one or more values of the one or more photoresist parameters, and the association between the generated simulated diffraction signal and the one or more values of the one or more photoresist parameters are stored.

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