Determining ion beam parallelism using refraction method

Details Determining ion beam parallelism using refraction method Determining ion beam parallelism using refraction method

2008-07-08

2008-07-08

Souw, Bernard E (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S491100, C250S492100, C250S492200, C250S492300, C313S359100

Reexamination Certificate

active

11386596

ABSTRACT:
A system, method and program product for determining parallelism of an ion beam using a refraction method, are disclosed. One embodiment includes determining a first test position of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system and adjustments of the ion implanter system based on the parallelism determination are also disclosed.

REFERENCES:
patent: 5696382 (1997-12-01), Kwon
patent: 6437350 (2002-08-01), Olson et al.
patent: 6690022 (2004-02-01), Larsen et al.
patent: 6791094 (2004-09-01), Olson et al.
patent: 6828572 (2004-12-01), Reece et al.
patent: 6858854 (2005-02-01), Keum et al.
patent: 6903350 (2005-06-01), Vanderberg et al.
patent: 2003/0183780 (2003-10-01), Makoto et al.
patent: 2006/0169922 (2006-08-01), Chang et al.
patent: 2007/0221871 (2007-09-01), Callahan et al.
patent: 0457321 (1991-11-01), None
patent: 1202320 (2002-05-01), None
patent: 01082443 (1989-03-01), None

Affiliated with

Also associated with

Rating

Determining ion beam parallelism using refraction method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Determining ion beam parallelism using refraction method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Determining ion beam parallelism using refraction method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3928252