Determination of interfacial states in solid heterostructures us

Radiant energy – Inspection of solids or liquids by charged particles – Methods

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

250308, H01J 3700

Patent

active

052006190

ABSTRACT:
A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

REFERENCES:
patent: 4864131 (1989-09-01), Rich et al.
patent: 5015851 (1991-05-01), Singh et al.
patent: 5063293 (1991-11-01), Rich et al.
The Physics and Chemistry of SiO.sub.2 and SiO.sub.2 Interface, Helms and Deal (eds), Plenum Press, New York (1988).
Schultz and Lynn, Rev. Mod. Phys., 60, (1989).
Nielsen, Lynn et al., Appl. Phys. Lett., 51, 1022 (1987).
Nielsen, Lynn et al., Phys. Rev., B40, 1434 (1989).
Lynn, Nielsen et al., Can. J. Phys., 67, (1989).
Uedono et al., Phys. Lett., 133A, 83 (1988).
Zhang et al., Appl. Surf. Sci., 39, 374 (1989).
Lynn et al., Appl. Phys. Letter., 47(b) 239 (1985).
Canter, "Positron Studies of Solids, Surfaces and Atoms", 103, World Scientific, N.Y., N.Y. (1986).
Nicollin et al., "MOS (Metal Oxide Semiconductor)", Physics and Technology, p. 789, John Wiley & Sons, New York, (1982).
Asoka-Kumar, Lynn et al., J. Appl. Phys., 69, 6603-6606 (May 1991).
Yeow et al., J. Phys. D: L Appl. Phys., 8, 1495 (1975).
Positrons in Solids, Hautojarvi (Ed.), Springer-Verlag, New York (1979).
Asoka-Kumar & Lynn, "Implantation Profile of Low-energy Positrons in Solids", Appl. Phys. Lett. 57, 1634-1636 (Oct. 15, 1990).
Mantl and Triftshauser, Phys. Rev. B, 17, 1645 (1978).
Fare et al., J. Appl. Phys., 63, 5507 (1988).
Lynn & Asoka-Kumar, "Proceedings of the 2nd Workshop on Researchers Using Positrons, Feb. 28-Mar. 1, 1991", Japan Atomic Energy Research Institute, Takasaki Radiation Chemistry Research Establishment, 9-2 132-141 (1991).
Schultz et al., Phys. Rev. Lett., 61(2), 187-190 (1988).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Determination of interfacial states in solid heterostructures us does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Determination of interfacial states in solid heterostructures us, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Determination of interfacial states in solid heterostructures us will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-538599

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.