Detection of defects in semiconductor materials

Details Detection of defects in semiconductor materials Detection of defects in semiconductor materials

1980-12-08

1982-02-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156636, 156645, 156647, 156903, 252 792, H01L 21306

Patent

active

043167659

ABSTRACT:
Defect densities in InP and InP.sub.x As.sub.1-x crystals and particularly in zinc-doped LEC-pulled InP crystals are accurately detected using a specific etchant to produce etch pits corresponding to defect sites. This etchant includes H.sub.2 O.sub.2, H.sub.2 SO.sub.4, and water.

REFERENCES:
patent: 4100014 (1978-07-01), Kuhn-Kuhnenfeld et al.
J. Electrochem. Soc.: Sold State Science, vol. 118, No. 5, May 1971, Selective Etching of Gallium Arsenide Crystals in H.sub.2 SO.sub.4 --H.sub.2 O.sub.2 --H.sub.2 O System by Iida et al., pp. 768-771.

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