Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2011-05-17
2011-05-17
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C438S010000, C438S014000, C438S018000
Reexamination Certificate
active
07943401
ABSTRACT:
Methods for detecting the breakdown potential of a semiconductor device having a thin dielectric layer are disclosed. The method includes measuring a spectroscopy of the thin dielectric layer and determining whether the spectroscopy exhibits the presence of a breakdown precursor (H2, H interstitial radical, H attached radical, and H attached dimer). Preferably, the method is carried out in the presence of a substantially significant applied electric field across dielectric layer. A semiconductor device tested in accordance with this method is also disclosed. Additionally, methods for reducing dielectric breakdown of a semiconductor device having a thin dielectric layer involving the substitution of a second molecule for H2molecules present in the dielectric. This second molecule preferably does not react with Si or O to form an undesired attached state and may be an inert gas having a molecular size approximating that of a Hydrogen atom, such as Helium. A semiconductor device made using this method is also disclosed.
REFERENCES:
patent: 4668653 (1987-05-01), Teller et al.
patent: 5198392 (1993-03-01), Fukuda et al.
patent: 5885666 (1999-03-01), Doll et al.
patent: 6214561 (2001-04-01), Peters et al.
patent: 6633392 (2003-10-01), Singh et al.
patent: 2005/0037615 (2005-02-01), Cabib et al.
patent: 2006/0084236 (2006-04-01), Vogt
Wikipedia, Stark effect; “http://en.wikipedia.org/wiki/Stark—effect”.
Encyclopedia Britannica, Stark effect.
Wikipedia, Zeeman effect; “http://en.wikipedia.org/wiki/Zeeman—effect”.
Encyclopedia Britannica, Zeeman effect.
Goddard, III William A.
Miyata Masayasu
Tamir-Kheli Jamil
Au Bac H
California Institute of Technology
Loeb & Loeb LLP
Picardat Kevin M
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