Detecting the endpoint of chem-mech polishing, and resulting sem

Details Detecting the endpoint of chem-mech polishing, and resulting sem Detecting the endpoint of chem-mech polishing, and resulting sem

1993-03-19

1994-06-14

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With electrical contact in hole in semiconductor

257798, 257638, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

053213041

ABSTRACT:
A contact structure is formed atop a semiconductor wafer at a level whereat it is desired to terminate polishing of a layer overlying the contact structure. When the contact structure becomes exposed to a polishing slurry, an electrical characteristic, such as resistance or impedance, is registered by measuring apparatus. In one embodiment, two or more contact structures are formed atop the wafer, vias are formed through the wafer, and the vias are filled, thereby providing a conductive path from the contact structures to the back side of the wafer. The measuring apparatus probes the filled vias on the back side of the wafer. A change in resistance/impedance indicates that the contact structures have become exposed during polishing, and polishing is terminated. In another embodiment of the invention, one or more contact structures are formed atop the wafer. The measuring apparatus is connected to a probe in the polishing slurry, and to the wafer itself, such as to the back side of the wafer. Again, a change in resistance/impedance indicates that the contact structures have become exposed during polishing, and polishing is terminated.

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