Detecting switching of access elements of phase change...

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S148000, C365S194000, C365S189070

Reexamination Certificate

active

07154774

ABSTRACT:
A memory includes a storage element (OUM) made of a phase-change material for storing a logic value and an access element (OTS) switching from a higher resistance condition to a lower resistance condition in response to a selection of the memory cell, the access element in the higher resistance condition decoupling the storage element from a read circuit and in the lower resistance condition coupling the storage element to the read circuit. The read circuit includes a sense amplifier to determine the logic value stored in the memory cell according to an electrical quantity associated with the memory cell. The read circuit further includes a detector that detects the switching of the access element by comparison to a delayed waveform or sensing a change in the column rate of change, and a circuit to enable the sense amplifier in response to the detection of the switching of the access element.

REFERENCES:
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patent: 7012834 (2006-03-01), Cho et al.
patent: 2005/0185572 (2005-08-01), Resta et al.
U.S. Appl. No. 11/093,877, filed Mar. 30, 2005, Tyler Lowrey et al.,Using A Bit Specific Reference Level To Read A Memory.
U.S. Appl. No. 11/093,864, filed Mar. 30, 2005, Tyler Lowrey et al.,Using Higher Current to Read A Triggered Phase Change Memory.
U.S. Appl. No. 11/093,878, filed Mar. 30, 2005, Ward D. Parkinson et al.,Reading Phase Change Memories.
U.S. Appl. No. 11/093,879, filed Mar. 30, 2005, Ferdinando Bedeschi et al.,Circuit For Reading Memory Cells.

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