Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2006-01-11
2010-06-15
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C432S253000, C432S258000, C414S935000, C414S937000, C414S938000
Reexamination Certificate
active
07736436
ABSTRACT:
An edge ring for use in batch thermal processing of wafers supported on a vertical tower within a furnace. The edge rings are have a width approximately overlapping the periphery of the wafers and are detachably supported on the towers equally spaced between the wafer to reduce thermal edge effects. The edge rings have may have internal or external recesses to interlock with structures on or adjacent the fingers of the tower legs supporting the wafers or one or more steps formed on the lateral sides of the edge ring may slide over and then fall below a locking ledge associated with the support fingers. Preferably, the tower and edge ring and other parts of the furnace adjacent the hot zone are composed of silicon.
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Cadwell Tom L.
Sklyar Michael
Zehavi Ranaan
Guenzer Charles S.
Integrated Materials, Incorporated
Kunemund Robert M
Song Matthew J
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