Design structure for SRAM active write assist for improved...

Details Design structure for SRAM active write assist for improved... Design structure for SRAM active write assist for improved...

2007-10-31

2010-06-15

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S189090, C365S230060

Reexamination Certificate

active

07738283

ABSTRACT:
A design structure embodied in a machine-readable medium used in a design process is provided. The design structure comprises a static random access memory (“SRAM”), including a plurality of cells arranged in an SRAM having a plurality of columns; and a voltage control circuit operable to temporarily raise a voltage level of a low voltage reference to cells belonging to a column selected for writing from the plurality of columns, wherein the voltage control circuit includes a first n-type field effect transistor (“NFET”) and a second NFET, the first NFET having a conduction path connected between ground and the low voltage reference, the second NFET having a conduction path connected between a power supply and the low voltage reference.

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