Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-06
2008-11-25
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S068000, C257S071000, C257S277000, C257S297000, C257S298000, C257S299000, C257S300000, C257S301000, C257S302000, C257S303000, C257S304000, C257S305000, C257S306000, C257S307000, C257S308000, C257S309000, C257S310000, C257S311000, C257S312000, C257S313000, C257S532000, C257S535000, C257S908000
Reexamination Certificate
active
07456459
ABSTRACT:
The present invention discloses capacitors having via connections and electrodes designed such that they provide a low inductance path, thus reducing needed capacitance, while enabling the use of embedded capacitors for power delivery and other uses. One embodiment of the present invention discloses a capacitor comprising the following: a top capacitor electrode and a bottom capacitor electrode, wherein the top electrode is smaller than the bottom electrode, comprising, on all sides of the capacitor; in an array, a multiplicity of vias located on all sides of the top and bottom capacitor electrodes, wherein the top electrode and the vias connecting to the top electrode act as an inner conductor, and the bottom electrode and the vias connecting to the bottom electrode act as an outer conductor.
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Georgia Tech Research Corporation
Soward Ida M
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