Design and simulation methods for electrostatic protection...

Details Design and simulation methods for electrostatic protection... Design and simulation methods for electrostatic protection...

2005-11-22

2008-10-07

Whitmore, Stacy A (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C703S007000

Reexamination Certificate

active

07434179

ABSTRACT:
A physical analysis (S2) of the elements used in an ESD protection circuit is performed; parameters of the elements that have a comparatively large effect on ESD protection characteristics are extracted as key parameters (S4); and a mixed-mode device-circuit simulation of the ESD protection circuit is performed, using the key parameters, to optimize the key parameters (S5). This can shorten the time required for designing an ESD circuit.

REFERENCES:
patent: 2005/0065762 (2005-03-01), Hayashi
patent: 2001339052 (2001-12-01), None
patent: 2004-79952 (2004-03-01), None
M.P.J. Mergens et al.; “High Holding Current SCRs (HHI-SCR) for ESD Protection and Latch-up Immune IC Operation” EOS/ESD Symp., 1A.3, 2002.

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