Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-08-18
1999-09-14
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257403, 257412, 257616, H01L 2976, H01L 2994, H01L 31062, H01L 31119
Patent
active
059527013
ABSTRACT:
A pair of complementary CJIGFETs (100 and 160) are created from a body of semiconductor material (102 and 104). Each CJIGFET is formed with (a) a pair of laterally separated source/drain zones (112 and 114 or 172 and 174) situated along the upper surface of the semiconductor body, (b) a channel region (110 or 170) extending between the source/drain zones, and (c) a gate electrode (118 or 178) overlying, and electrically insulated from, the channel region. The gate electrode of each CJIGFET has a Fermi energy level within 0.3 ev of the middle of the energy band gap of the semiconductor material. One of the transistors typically conducts current according to a field-induced-channel mode while the other transistor conducts current according to a metallurgical-channel mode. The magnitude of the threshold voltage for each CJIGFET is normally no more than 0.5 V.
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Bulucea Constantin
Kerr Daniel C.
Meetin Ronald J.
National Semiconductor Corporation
Ngo Ngan V.
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