Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-09-07
2010-06-29
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S210110, C365S193000, C365S205000, C365S185200
Reexamination Certificate
active
07746717
ABSTRACT:
A static random access memory (SRAM) can include an array of memory cells, wherein each memory cell is coupled to one of a plurality of sense amplifiers through a bitline. The SRAM also can include replica bitline circuitry including a replica bitline coupled to a replica bitline amplifier. The replica bitline amplifier can provide a strobe signal to the plurality of sense amplifiers, wherein the replica bitline amplifier includes a feedback path. An SRAM also may include a write replica circuit generating a signal when data has been written to the write replica circuit. A wordline of the memory array can be turned off responsive to the signal.
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Chen Hsiao Hui
Peng Tao
Cuenot Kevin T.
Phung Anh
Wendler Eric
Xilinx , Inc.
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