Desensitizing static random access memory (SRAM) to process...

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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C365S210110, C365S193000, C365S205000, C365S185200

Reexamination Certificate

active

07746717

ABSTRACT:
A static random access memory (SRAM) can include an array of memory cells, wherein each memory cell is coupled to one of a plurality of sense amplifiers through a bitline. The SRAM also can include replica bitline circuitry including a replica bitline coupled to a replica bitline amplifier. The replica bitline amplifier can provide a strobe signal to the plurality of sense amplifiers, wherein the replica bitline amplifier includes a feedback path. An SRAM also may include a write replica circuit generating a signal when data has been written to the write replica circuit. A wordline of the memory array can be turned off responsive to the signal.

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patent: 5910924 (1999-06-01), Tanaka et al.
patent: 6181640 (2001-01-01), Kang
patent: 6285604 (2001-09-01), Chang
patent: 6353569 (2002-03-01), Mizuno et al.
patent: 6690608 (2004-02-01), Nii et al.

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