Deselected word line that floats during MLC programming of a fla

Details Deselected word line that floats during MLC programming of a fla Deselected word line that floats during MLC programming of a fla

1997-03-31

1998-09-01

Dinh, Son T.

Static information storage and retrieval

Floating gate

Particular biasing

36518511, 36518518, G11C 700

Patent

active

058019910

ABSTRACT:
A method of programming a flash memory cell. The method occurs in a memory device having a decoder that receives a select signal. The decoder is coupled to a first word line and a second word line. The first word line is coupled to a first memory cell and the second word line is coupled to a second memory cell. The select signal is asserted to a first voltage such that the decoder selects the first word line and the first memory cell and deselects the second word line and the second memory cell. The select signal is then asserted to a second voltage such that the decoder couples a programming voltage to the first word line and floats the second word line. The first memory cell is then programmed while the second word line is floating.

REFERENCES:
patent: 5440505 (1995-08-01), Fazio et al.
patent: 5473564 (1995-12-01), Kowalsky
patent: 5497354 (1996-03-01), Sweha et al.
patent: 5532971 (1996-07-01), Tanaka et al.
patent: 5539690 (1996-07-01), Talreja et al.
patent: 5574686 (1996-11-01), Watsuji et al.

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