Depth of focus (DOF) for trench-first-via-last (TFVL)...

Details Depth of focus (DOF) for trench-first-via-last (TFVL)... Depth of focus (DOF) for trench-first-via-last (TFVL)...

2005-04-19

2005-04-19

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000

Reexamination Certificate

active

06881665

ABSTRACT:
A method is provided, the method comprising forming a dielectric layer above a structure layer, forming a hard mask layer above the dielectric layer, and forming at least one trench opening and at least one upper portion of a first via opening in the dielectric layer through the hard mask layer. The method also comprises forming a low viscosity photoresist layer above the at least one trench opening and the at least one upper portion of the first via opening in the dielectric layer.

REFERENCES:
patent: 6319821 (2001-11-01), Liu et al.

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