Deposition rate control on wafers with varying characteristics

Details Deposition rate control on wafers with varying characteristics Deposition rate control on wafers with varying characteristics

1997-08-28

2000-10-10

Tsai, Jey

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

118725, 118667, G01R 3126, H01L 2166

Patent

active

061301051

ABSTRACT:
The present invention is a method and apparatus for depositing a film on a substrate. According to the present invention a characteristic of a substrate is determined. The substrate is then heated by heat from an upper heat source and heat from a lower heat source wherein the ratio of heat supplied from the upper heat source relative to the lower heat source is dependent upon the determined wafer characteristic.

REFERENCES:
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patent: 5418885 (1995-05-01), Hauser et al.
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patent: 5589224 (1996-12-01), Tepman et al.
patent: 5650082 (1997-07-01), Anderson
John M. Stone; "Radiation and Optics, An Introduction to the Clasical Theory"; McGraw-Hill Book Company; 5 pages total.
Ozturk, et al.; "Manufacturability Issues in Rapid Thermal Chemical Vapor Deposition"; IEEE Transactions on Semiconductor Manufacturing; vol. 4, No. 2., May 1991; pp. 155-165.

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