Deposition profile modification through process chemistry

Details Deposition profile modification through process chemistry Deposition profile modification through process chemistry

2006-10-17

2006-10-17

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S788000

Reexamination Certificate

active

07122485

ABSTRACT:
Disclosed are methods for modifying the topography of HDP CVD films by modifying the composition of the reactive mixture. The methods allow for deposition profile control independent of film deposition rate. They rely on changes in the process chemistry of the HDP CVD system, rather than hardware modifications, to modify the local deposition rates on the wafer. The invention provides methods of modifying the film profile by altering the composition of the reactive gas mixture, in particular the hydrogen content. In this manner, deposition profile and wiw uniformity are decoupled from deposition rate, and can be controlled without hardware modifications.

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