Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-28
2006-02-28
Blum, David (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S656000, C438S680000
Reexamination Certificate
active
07005372
ABSTRACT:
Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.
REFERENCES:
patent: 4804560 (1989-02-01), Shioya et al.
patent: 5028565 (1991-07-01), Chang et al.
patent: 5227329 (1993-07-01), Kobayashi
patent: 5250329 (1993-10-01), Miracky et al.
patent: 5326723 (1994-07-01), Petro et al.
patent: 5391394 (1995-02-01), Hansen
patent: 5661080 (1997-08-01), Hwang et al.
patent: 5726096 (1998-03-01), Jung
patent: 5795824 (1998-08-01), Hancock
patent: 5804249 (1998-09-01), Sukharev et al.
patent: 5817576 (1998-10-01), Tseng et al.
patent: 5956609 (1999-09-01), Lee et al.
patent: 6001729 (1999-12-01), Shinriki et al.
patent: 6017818 (2000-01-01), Lu
patent: 6066366 (2000-05-01), Berenbaum et al.
patent: 6099904 (2000-08-01), Mak et al.
patent: 6107200 (2000-08-01), Takagi et al.
patent: 6143082 (2000-11-01), McInerney et al.
patent: 6174812 (2001-01-01), Hsiung et al.
patent: 6245654 (2001-06-01), Shih et al.
patent: 6265312 (2001-07-01), Sidhwa et al.
patent: 6294468 (2001-09-01), Gould-Choquette et al.
patent: 6297152 (2001-10-01), Itoh et al.
patent: 6309966 (2001-10-01), Govindarajan et al.
patent: 6355558 (2002-03-01), Dixit et al.
patent: 6551929 (2003-04-01), Kori et al.
patent: 6566250 (2003-05-01), Tu et al.
patent: 6566262 (2003-05-01), Rissman et al.
patent: 6607976 (2003-08-01), Chen et al.
patent: 6635965 (2003-10-01), Lee et al.
patent: 6706625 (2004-03-01), Sudijono et al.
patent: 6740585 (2004-05-01), Yoon et al.
patent: 6844258 (2005-01-01), Fair et al.
patent: 6861356 (2005-03-01), Matsuse et al.
patent: 2002/0090796 (2002-07-01), Desai et al.
patent: 2003/0059980 (2003-03-01), Chen et al.
patent: 2003/0127043 (2003-07-01), Lu et al.
patent: 2004/0044127 (2004-03-01), Okubo et al.
patent: 2004/0206267 (2004-10-01), Sambasivan et al.
patent: WO 01/27347 (2001-04-01), None
Klaus et al., “Atomically Controlled Growth of Tungsten and Tungsten Nitride Using Sequential Surface Reactions,” Applied Surface Science, 162-163, (2000) 479-491.
Li et al., “Deposition of WNxCyThin Films by ALCVD™ Method for Diffusion Barriers in Metallization,” IITC Conference Report, 2002, 3 Pages.
Elam et al., “Nucleation and Growth During Tungsten Atomic Layer Deposition on SiO2Surfaces,” Thin Solid Films, 2001, 13 Pages.
Collins et al., “Pulsed Deposition of Ultra Thin Tungsten for Plugfill of High Aspect Ratio Contacts,” Presentation made at Semicon Korea 2003, Jan. 21, 2003, 9 Pages.
Lee et al., Pulsed Deposition of Ultra Thin Tungsten and its Application for Plugfill of High Aspect Ratio Contacts, Abstract, Jan. 21, 2003, 1 Page.
Collins et al, “Pulsed Deposition of Ultra Thin Tungsten for Plugfill of High Aspect Ratio Contacts,” Semiconductor Equipment and Materials International, Semicon Korea, Jan. 21, 2003, 3 Pages.
George et al., “Surface Chemistry for atomic Layer Growth”, J. Phys. Chem, 1996, vol. 100, no, 31, pp. 13121-13131.
Bell et al., “Batch Reactor Kinetic Studies of Tungsten LPCVD from Silane and Tungsten Hexafluoride”, J. Electrochem. Soc., Jan. 1996, vol. 143, No. 1, pp. 296-302.
Klaus et al., “Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction”, Thin Solid Films 360 (2000) 145-153.
Lee, et al., U.S. Appl. No. 10/649,351, filed Aug. 26, 2003, Office Action dated Jul. 14, 2005.
Wongsenakhum, et al., U.S. Appl. No. 10/815,560, filed Mar. 31, 2004, Office Action dated Jul. 12, 2005.
Lee, et al., U.S. Appl. No. 10/649,351, filed Aug. 26, 2003, Office Action dated Feb. 8, 2005.
Lee et al., PCT International Search Report, Completed Oct. 15, 2004, PCT/US2004/006940, Int'l filing date Mar. 5, 2004.
Lee et al., Written Opinion, Completed Oct. 15, 2004, PCT/US2004/006940, Int'l filing date Mar. 5, 2004.
Wongsenakhum, et al., “Method of Forming Low-Resistivity Tungsten Interconnects”, U.S. Appl. No. 10/815,560, filed Mar. 31, 2004.
Lee, et al., “Method for Reducing Tungsten Film Roughness and Improving Step Coverage”, U.S. Appl. No. 10/649,351, filed Aug. 26, 2003.
Presentation by Inventor James Fair: “Chemical Vapor Deposition of Refractory Metal Silicides,” 27 Pages, 1983.
Saito et al., “A Novel Copper Interconnection Technology Using Self Aligned Metal Capping Method,” IEEE, 3 Pages, 2001.
Ashtiani Kaihan A.
Collins Joshua
Fair James A.
Gao Juwen
Levy Karl B.
Beyer Weaver & Thomas LLP
Blum David
Novellus Systems Inc.
Pham Thanhha
LandOfFree
Deposition of tungsten nitride does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Deposition of tungsten nitride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition of tungsten nitride will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3711212