Deposition of silicon dioxide films at temperatures as low as 10

Details Deposition of silicon dioxide films at temperatures as low as 10 Deposition of silicon dioxide films at temperatures as low as 10

1991-09-18

1993-04-20

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

4272552, 4272551, 427255, 427314, 427238, C23C 1600

Patent

active

052041417

ABSTRACT:
Process for depositing films of silicon dioxide by a low pressure CVD method, utilizing 1,4 disilabutane as the silicon precursor and molecular oxygen as the oxygen source. The deposition process permits films to be put down on a substrate at temperatures as low as 100.degree. C. with essentially no carbon in the film. The 1,4 disilabutane can be used as a substitute for silane, a toxic, pyrophoric compressed gas.

REFERENCES:
patent: 4900591 (1990-02-01), Bennett et al.
patent: 4923716 (1990-05-01), Brown et al.
Hochberg et al., "The LPCVD of Silicon Oxide Films below 400.degree. C. from Liquid Sources" Journal of the Electrochemical Society, vol. 136, No. 6, Jun. 1989 pp. 1843-1844.
Goldsmith et al, "The Deposition of Vitreous Silicon dioxide films from Silane", RCA Review 28 (1967) pp. 153-165.

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