Deposition of silicon dioxide and silicon oxynitride using bis(t

Details Deposition of silicon dioxide and silicon oxynitride using bis(t Deposition of silicon dioxide and silicon oxynitride using bis(t

1998-06-11

1999-11-02

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438790, 438794, 427 99, 4272552, H01L 21318

Patent

active

059769912

ABSTRACT:
A process for the chemical vapor deposition of silicon dioxide and silicon oxynitride from reactant gases O.sub.2, O.sub.3, N.sub.2 O, NO, NO.sub.2, NH.sub.3 and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2. A process whereby a stack of silicon containing dielectrics ranging from silicon nitride to silicon oxide may be deposited successively (at the same pressure and temperature) by changing the reactants O.sub.2, O.sub.3, N.sub.2 O, NO, NO.sub.2, NH.sub.3 while maintaing a constant flow of (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2. The films are suitable for use in the semiconductor and related industries.

REFERENCES:
patent: 5234869 (1993-08-01), Mikata et al.
patent: 5874368 (1999-02-01), Laxman et al.
Silicon Processing for the VLSI ERA, Wolf, Stanley, and Talbert, Richard N., Lattice Press, Sunset Beach, California (1990), pp. 20-22, 327-330.
Inorganics & Organometallics from Aldrich, 1998-99.
A. K. Hochberg and D.L. O'Meara, Mat. Res. Soc. Symp. Proc., vol. 204, (1991), pp. 509-514.
R. G. Gordon and D. M. Hoffman, Chem. Mater., vol. 2, (1990), pp. 482-484.
Sorita et al., J. Electro. Chem. Soc., vol. 141, No. 12, (1994), pp. 3505-3511.
B. A. Scott, J. M. Martinez-Duart, D. B. Beach, T. N. Nguyen, R. D. Estes and R. G. Schad., Chemtronics, 1989, vol. 4, pp. 230-234.
J. M. Grow, R. A. Levy, X. Fan and Bhaskaran, Materials Letters, 23, (1995), pp. 187-193.

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