Deposition of silicon-containing films using organosilicon compo

Details Deposition of silicon-containing films using organosilicon compo Deposition of silicon-containing films using organosilicon compo

1988-10-26

1990-01-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437235, 437225, 20419225, 427 39, 148DIG114, 148DIG118, 252372, H01L 2100, H01L 2102, H01L 2156, H01L 21425

Patent

active

048943525

ABSTRACT:
In a low-pressure reactor, the addition of nitrogen trifluoride to a gaseous organosilicon compound such as tetraethoxysilane (TEOS) or tetramethylcyclotetroxysilane (TMCTS) results in surprisingly enhanced silicon dioxide deposition rates. The oxide deposited using this process also has the capability of filling features having aspects ratios up to at least 1.0, and may exhibit low mobile ion concentrations. The process is also applicable for depositing other silicon-containing films such as polysilicon and silicon nitride.

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